AFP02N8-000 chip equivalent, general purpose phemt chip.
s Low Noise Figure, 1.25 dB @ 4 GHz s High Associated Gain, 15.0 dB @ 4 GHz s High MAG, > 18 dB @ 4 GHz s 0.7 µm Ti/Pd/Au Gates s Passivated Surface
350 125 S G G S 50 50.
The device employs 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part.
50 20 400
Absolute .
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